62712 tkim/o2010pe tkim tc-00002339 no. a1715-1/7 http://onsemi.com semiconductor components industries, llc, 2013 july, 2013 emh1307 p-channel power mosfet ? 20v, ? 6.5a, 26m , single emh8 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. features ? on-resistance r ds (on)1 : 20m (typ.) ? input capacitance ciss=1100pf(typ.) ? 1.8v drive ? halogen free compliance ? protection diode in speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss --20 v gate-to-source voltage v gss 10 v drain current (dc) i d --6.5 a drain current (pulse) i dp pw 10 s, duty cycle 1% --26 a allowable power dissipation p d when mounted on ceramic substrate (1200mm 2 0.8mm) 1.5 w channel temperature tch 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7045-001 ordering number : ena1715a 1 : source 2 : source 3 : source 4 : gate 5 : drain 6 : drain 7 : drain 8 : drain emh8 1 4 85 0.125 0.2 0.2 2.1 1.7 0.5 2.0 0.2 0.75 0.05 product & package information ? package : emh8 ? jeita, jedec : - ? minimum packing quantity : 3,000 pcs./reel taping type : tl marking electrical connection tl jg lot no. 8765 1234 EMH1307-TL-H
emh1307 no. a1715-2/7 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d =--1ma, v gs =0v --20 v zero-gate voltage drain current i dss v ds =--20v, v gs =0v --1 a gate-to-source leakage current i gss v gs =8v, v ds =0v 10 a cutoff voltage v gs (off) v ds =--10v, i d =--1ma --0.4 --1.3 v forward transfer admittance | yfs | v ds =--10v, i d =--3a 8.2 s static drain-to-source on-state resistance r ds (on)1 i d =--3a, v gs =--4.5v 20 26 m r ds (on)2 i d =--1.5a, v gs =--2.5v 31 44 m r ds (on)3 i d =--0.5a, v gs =--1.8v 49 78 m input capacitance ciss v ds =--10v, f=1mhz 1100 pf output capacitance coss 210 pf reverse transfer capacitance crss 160 pf turn-on delay time t d (on) see speci ed test circuit. 12.8 ns rise time t r 55 ns turn-off delay time t d (off) 120 ns fall time t f 88 ns total gate charge qg v ds =--10v, v gs =--4.5v, i d =--6.5a 13 nc gate-to-source charge qgs 1.9 nc gate-to-drain ?miller? charge qgd 3.7 nc diode forward voltage v sd i s =--6.5a, v gs =0v --0.8 --1.2 v switching time test circuit ordering information device package shipping memo EMH1307-TL-H emh8 3,000pcs./reel pb free and halogen free pw=10 s d.c. 1% p. g 50 g s d i d = --3a r l =3.33 v dd = --10v v out emh1307 v in 0v --4.5v v in
emh1307 no. a1715-3/7 i d -- v gs drain current, i d -- a gate-to-source voltage, v gs -- v i d -- v ds drain current, i d -- a drain-to-source voltage, v ds -- v it15992 it15993 0 --2.0 --0.4 --0.6 --0.8 --0.2 0 0 -- 7 -- 4 -- 3 -- 6 -- 5 -- 1 -- 2 --1.0 --0.2 --0.3 --0.4 --0.1 --0.5 --0.6 --0.7 --0.8 --0.9 0 --10 -- 9 -- 8 -- 7 --1.2 --1.0 --1.4 --1.6 --1.8 -- 6 -- 5 -- 4 -- 3 -- 1 -- 2 --8.0v --2.5v --1.6v v gs = --1.5v --25 c 25 c ta=75 c v ds = --10v --1.8v --4.5v --6.0v ta=25 c i s -- v sd source current, i s -- a diode forward voltage, v sd -- v drain current, i d -- a | y fs | -- i d forward transfer admittance, | y fs | -- s sw time -- i d switching time, sw time -- ns drain current, i d -- a gate-to-source voltage, v gs -- v static drain-to-source on-state resistance, r ds (on) -- m ambient temperature, ta -- c r ds (on) -- ta r ds (on) -- v gs static drain-to-source on-state resistance, r ds (on) -- m ciss, coss, crss -- v ds ciss, coss, crss -- pf drain-to-source voltage, v ds -- v 0 100 1000 7 5 7 2 3 3 2 --20 --12 --2 --6 --8 --10 --16 --18 --14 -- 4 it15999 it15998 it15997 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --0.001 --0.01 7 5 3 2 --0.1 7 5 3 2 --1.0 7 5 3 2 --10 7 5 3 2 2 it15996 25 c -- 2 5 c f=1mhz ciss coss crss ta= 75 c --0.01 --0.1 23 57 23 57 5 --1.0 7 23 10 7 5 2 3 5 7 2 3 2 3 0.1 1.0 v ds = --10v 25 c ta= --25 c 75 c v gs =0v 1000 100 10 3 2 5 7 3 2 5 7 7 --0.01 --1.0 23 57 --0.1 23 57 23 57 --10 v dd = --10v v gs = --4.5v t d (off) t f t d (on) t r it15994 it15995 0 0 80 --12 -- 2 -- 4 -- 6 -- 8 --60 --40 --20 0 20 40 60 80 100 120 140 160 --10 70 50 60 40 20 30 10 0 80 20 30 10 70 40 60 50 v gs = --2.5v, i d = --1.0a v gs = - -1.8v, i d = --0.5a ta=25 c --3.0a v gs = --4.5v, i d = --3.0a --1.0a i d = --0.5a
emh1307 no. a1715-4/7 v gs -- qg total gate charge, qg -- nc gate-to-source voltage, v gs -- v a s o drain-to-source voltage, v ds -- v drain current, i d -- a --0.1 --0.01 2 3 5 7 2 --1.0 3 5 7 2 it15515 --0.1 23 57 23 57 --1.0 i dp = --26a (pw 10 s) operation in this area is limited by r ds (on). 1ms 10ms 100ms dc operation ( ta=25 c ) i d = --6.5a 100 s 23 --10 --10 3 5 2 3 5 7 ta=25 c single pulse when mounted on ceramic substrate (1200mm 2 0.8mm) it15600 0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 14 12 8 --4.5 --4.0 410 6 2 v ds = --10v i d = --6.5a p d -- ta allowable power dissipation, p d -- w ambient temperature, ta -- c it15516 0 0 20 40 0.4 0.6 60 80 100 120 140 160 1.0 0.2 0.8 1.4 1.6 1.5 1.2 1.8 when mounted on ceramic substrate (1200mm 2 0.8mm)
emh1307 no. a1715-5/7 embossed taping speci cation EMH1307-TL-H
emh1307 no. a1715-6/7 outline drawing land pattern example EMH1307-TL-H mass (g) unit 0.008 * for reference mm unit: mm 0.4 0.3 0.5 1.9
emh1307 ps no. a1715-7/7 note on usage : since the emh1307 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns th e rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent covera ge may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc ass ume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchas e or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the d esign or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws a nd is not for resale in any manner.
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